| PART |
Description |
Maker |
| QID4515002 |
Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
|
Powerex Power Semiconductors
|
| CM200DY-12NF |
Dual IGBTMOD NF-Series Module 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM400DU-24NFJ |
Dual IGBTMOD NFJ-Series Module 400 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| CM200DU-12NFH |
Dual IGBTMOD NFH-Series Module 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM300DU-12H |
Dual IGBTMODU-Series Module 300 Amperes/600 Volts
Dual IGBTMOD U-Series Module 300 Amperes/600 Volts
Dual IGBTMOD⑩ U-Series Module 300 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HG-130H |
Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts
|
Powerex Power Semiconductor...
|
| CM1800HCB-34N |
Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM500HA-34A |
Single IGBTMOD A-Series Module 500 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM600HA-24A |
Single IGBTMOD A-Series Module 600 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| MG200J6ES61 MG200F6ES61 |
Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
